Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
VDSS
ID25
RDS(on)
IXTH/IXTT 10P50 IXTH/IXTT 11P50
-500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings -500 -500 ± 20 ± 30 10P50 11P50 10P50 11P50 10P50 11P50 -10 -11 -40 -44 -10 -11 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W °C °C °C °C
TO-247 AD (IXTH)
D
(TAB)
TO-268 (IXTT) Case Style
G S G = Gate S = Source D
(TAB)
D = Drain TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247)
300
1.13/10 Nm/lb.in. 6 4 g g
Features
z z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 12.