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Part Number IXTT11P50
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description P-Channel MOSFET
Datasheet IXTT11P50 DatasheetIXTT11P50 Datasheet (PDF)

  IXTT11P50   IXTT11P50
Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V ±20 V ±30 V - 11 A - 44 A - 11 A 1 J 300 W - 55 ... +150 °C 150 °C - 55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA BVDSS Temperature Coefficient VGS(th) VDS = VGS, ID = - 250μA VGS(th) Temperature Coefficient IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = - 5.5A, Note 1 RDS(on) Temperature Coefficient Characteristic Values Min. Typ. Max. - 500 V .



IXTT10P50 IXTT11P50 IXTT82N25P


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