Document
J109 / MMBFJ108 — N-Channel Switch
January 2015
J109 / MMBFJ108 N-Channel Switch
Features
• This device is designed for digital switching applications where very low on resistance is mandatory.
• Sourced from process 58
1 TO-92 1. Drain 2. Source 3. Gate
Figure 1. J109 Device Package
Ordering Information
Part Number J109
J109_D26Z MMBFJ108
Top Mark J109 J109 I8
3
2 1 SuperSOT-3
Marking: I8 1. Drain 2. Source 3. Gate
Figure 2. MMBFJ108 Device Package
Package TO-92 3L TO-92 3L SSOT 3L
Packing Method Bulk
Tape and Reel Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
25 -25 10 -55 to 150
V V mA °C
Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2
www.fairchildsemi.com
J109 / MMBFJ108 — N-Channel Switch
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max. J109(3) MMBFJ108(4)
Unit
Total Device Dissipation PD Derate Above 25°C
625 350 mW 5.0 2.8 mW/°C
RθJC RθJA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
125 °C/W 200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current
VGS(off) Gate-Source Cut-Off Voltage
IG = -10 μA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C
MMBFJ108 VDS = 15 V, ID = 10 nA J109
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0
MMBFJ108 J109
rDS(on) Drain-Source On Resistance
MMBFJ108 VDS ≤ 0.1 V, VGS = 0 J109
Small Signal Characteristics
Cdg(on) Csg(off)
Cdg(off)
Csg(off)
Drain-Gate &Source-Gate On Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz VDS = 0, VGS = -10 V, f = 1.0 MHz
Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Min. -25
-3.0 -2.0 80 40
Max. Unit
-3.0 -200 -10.0 -6.0
V nA
V
mA 8.0.