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J109 Dataheets PDF



Part Number J109
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Switch
Datasheet J109 DatasheetJ109 Datasheet (PDF)

J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 1 TO-92 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Ordering Information Part Number J109 J109_D26Z MMBFJ108 Top Mark J109 J109 I8 3 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Figure 2. MMBFJ108 Device Package Package TO-92 3L TO-92 3L SSOT 3L Pac.

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J109 / MMBFJ108 — N-Channel Switch January 2015 J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 1 TO-92 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Ordering Information Part Number J109 J109_D26Z MMBFJ108 Top Mark J109 J109 I8 3 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Figure 2. MMBFJ108 Device Package Package TO-92 3L TO-92 3L SSOT 3L Packing Method Bulk Tape and Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 -25 10 -55 to 150 V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com J109 / MMBFJ108 — N-Channel Switch Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. J109(3) MMBFJ108(4) Unit Total Device Dissipation PD Derate Above 25°C 625 350 mW 5.0 2.8 mW/°C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 125 °C/W 200 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current VGS(off) Gate-Source Cut-Off Voltage IG = -10 μA, VDS = 0 VGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100°C MMBFJ108 VDS = 15 V, ID = 10 nA J109 On Characteristics IDSS Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0 MMBFJ108 J109 rDS(on) Drain-Source On Resistance MMBFJ108 VDS ≤ 0.1 V, VGS = 0 J109 Small Signal Characteristics Cdg(on) Csg(off) Cdg(off) Csg(off) Drain-Gate &Source-Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0 MHz VDS = 0, VGS = -10 V, f = 1.0 MHz VDS = 0, VGS = -10 V, f = 1.0 MHz Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. Min. -25 -3.0 -2.0 80 40 Max. Unit -3.0 -200 -10.0 -6.0 V nA V mA 8.0.


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