J109

J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain or Source -25V 50mA 350mW -55 to 150°C -55 to 150°C rDS(on) ≤ 8Ω tON ≤ 4ns N-CHANNEL JFET SWITCH J SERIES TO-92 BOTTOM VIEW SST SERIES SOT-23 TOP VIEW D 1 3 D S G 1 2 3 G S 2 STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. BVGSS VGS(off) VGS(F) IDSS IGSS IG ID(off) rDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source Saturation Current Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance 108, 109, 110 110A 2 TYP J/SST108 MIN -25 -3 -10 MAX J/SST109 MIN -25 -2 40 -6 MAX J/SST110 MIN -25 -0.5 10 -4 MAX UNIT CONDITIONS IG = -1µA, VDS = 0V V mA VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V VDS = 15V, VGS = 0V VGS = -15V, VDS = 0V VDG = 10V, ID = 10mA VDS = 5V, VGS = -10V 0.7 80 -0.01 -0.01 0.02 3 8 3 12 3 18 25 Ω -3 -3 -3 nA VGS = 0V, VDS ≤ 0.1V DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. gfs gos rds(on) Ciss Crss en CHARACTERISTIC Forward Transconductance Output Conductance Drain to Source On...