J110

J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 58. 3 1 TO-92 1. Drain 2. Source 3. Gate 2 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 25 -25 10 -55 ~ +150 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108 109 110 rDS(on) Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 108 109 110 Small Signal Characteristics Cdg(on) Csg(off) Drain Gate & Source Gate On Capacitance Cdg(on) Drain-Gate Off Capacitance Cs...