J112

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value – 35 – 35 50 350 2.8 300 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –1.0 µAdc) Gate Reverse Current (VGS = –15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 µAdc) Drain–Cutoff Current (VDS = 5.0 Vdc, VGS = –10 Vdc) V(BR)GSS IGSS VGS(off) ID(off) 35 — – 1.0 — — – 1.0 – 5.0 1.0 Vdc nAdc Vdc nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(1) (VDS = 15 Vdc) Static Drain–Source On Resistance (VDS = 0.1 Vdc) Drain Gate and Source Gate On–Capacitance (VDS = VGS = 0, f = 1.0 MHz) Drain Gate Off–Capacitance (VGS = –10 Vdc, f = 1.0 MHz) Source Gate Off–Capacitance (VGS = –10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 µs, Duty Cycle = 3.0%. IDSS rDS(on) Cdg(on) + Csg(on) Cdg(off) Csg(off) 5.0 — — — 50 28 mAdc Ω pF — — 5.0 5.0 pF pF (Replaces J111/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 J112 TYPICAL SWITCHING CHARACTERISTICS 1000 t d(on...