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J113 Dataheets PDF



Part Number J113
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Switch
Datasheet J113 DatasheetJ113 Datasheet (PDF)

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Number J111 J111_D26Z J111_D74Z J112 J112_D26Z J112_D27Z J112_D74Z J.

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering Information Part Number J111 J111_D26Z J111_D74Z J112 J112_D26Z J112_D27Z J112_D74Z J113 J113_D74Z J113_D75Z MMBFJ111 MMBFJ112 MMBFJ113 Top Mark J111 J111 J111 J112 J112 J112 J112 J113 J113 J113 6P 6R 6S G SOT-23 S Note: Source & Drain D are interchangeable Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113 Device Package Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L SOT-23 3L SOT-23 3L Packing Method Bulk Tape and Reel Ammo Bulk Tape and Reel Tape and Reel Ammo Bulk Ammo Ammo Tape and Reel Tape and Reel Tape and Reel © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 -35 50 -55 to 150 V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Max. Symbol Parameter J111 / J112 / J113(3) MMBFJ111 / MMBFJ112 / MMBFJ113(4) Unit Total Device Dissipation PD Derate Above 25°C 625 350 mW 5.0 2.8 mW/°C RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 125 °C/W 200 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 2 www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Off Characteristics V(BR)GSS Gate-.


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