Document
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
January 2015
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51 • Source & Drain are interchangeable.
G SD
TO-92
Figure 1. J111 / J112 / J113 Device Package
Ordering Information
Part Number J111
J111_D26Z J111_D74Z
J112 J112_D26Z J112_D27Z J112_D74Z
J113 J113_D74Z J113_D75Z MMBFJ111 MMBFJ112 MMBFJ113
Top Mark J111 J111 J111 J112 J112 J112 J112 J113 J113 J113 6P 6R 6S
G
SOT-23
S
Note: Source & Drain D are interchangeable
Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113 Device Package
Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L SOT-23 3L SOT-23 3L
Packing Method Bulk
Tape and Reel Ammo Bulk
Tape and Reel Tape and Reel
Ammo Bulk Ammo Ammo Tape and Reel Tape and Reel Tape and Reel
© 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
35 -35 50 -55 to 150
V V mA °C
Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
J111 / J112 / J113(3)
MMBFJ111 /
MMBFJ112 / MMBFJ113(4)
Unit
Total Device Dissipation PD Derate Above 25°C
625 350 mW 5.0 2.8 mW/°C
RθJC RθJA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
125 °C/W 200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
2
www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics V(BR)GSS Gate-.