J174

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING 1 = 2 = 3 = source gate drain 1 handbook, halfpage 2 3 g MAM388 J174; J175; J176; J177 d s Note: Drain and source are interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Gate current Total power dissipation up to Tamb = 50 °C Ptot max. J174 Drain current −VDS = 15 V; VGS = 0 Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDS on max. 85 125 250 300 Ω −IDSS min. max. 20 135 7 70 2 35 1.5 20 mA mA 400 J175 J176 J177 mW ± VDS VGSO −IG max. max. max. 30 30 50 V V mA April 1995 2 Philips Semiconductors Product specification P-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Gate current (DC) Total power dissipation up to Tamb = 50 °C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 ...