J175

J/SST174 SERIES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage VGDS = 30V VGSS = 30V IG = -50mA 350mW -55 to 150°C -55 to 135°C D G S 1 2 3 1 SINGLE P-CHANNEL JFET SWITCH rDS(on) ≤ 85Ω ID(off) = 10pA J SERIES TO-92 BOTTOM VIEW SST SERIES SOT-23 TOP VIEW D S 1 3 2 G COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(F) IGSS IG ID(off) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Forward Voltage Gate Reverse Current Gate Operating Current Drain Cutoff Current MIN 30 -0.7 0.01 0.01 -0.01 -1 1 nA TYP MAX UNITS V CONDITIONS IG = 1µA, VDS = 0V IG = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 10V SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS(off) IDSS rDS(on) CHARACTERISTIC Gate to Source Cutoff Voltage Drain to Source Saturation Current Drain to Source On Resistance J/SST174 MIN 5 -20 MAX 10 -135 85 J/SST175 MIN 3 -7 MAX 6 -70 125 J/SST176 MIN 1 -2 MAX 4 -35 250 J/SST177 MIN 0.8 -1.5 MAX 2.25 -20 300 UNITS V mA Ω CONDITIONS VDS = -15V, ID = -10nA VDS = -15V, VGS = 0V VGS = 0V, VDS = -0.1V Linear Integrated...