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J210 Dataheets PDF



Part Number J210
Manufacturers NXP
Logo NXP
Description N-channel field-effect transistors
Datasheet J210 DatasheetJ210 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect trans.

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DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Marking codes: J210: J210. J211: J211. J212: J212. handbook, halfpage 2 J210; J211; J212 PINNING - TO-92 (SOT54) PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION 1 3 g MAM197 d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J210 J211 J212 IDSS drain current J210 J211 J212 Ptot yfs total power dissipation common-source transfer admittance J210 J211 J212 Tamb ≤ 50 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 mS mS mS VGS = 0; VDS = 15 V 2 7 15 − 15 20 40 400 mA mA mA mW ID = 1 nA; VDS = 15 V −1 −2.5 −4 −3 −4.5 −6 V V V CONDITIONS − MIN. MAX. ±25 UNIT V 1997 Dec 01 2 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note PARAMETER drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb ≤ 50 °C; note 1; see Fig.13 open drain open source CONDITIONS − − − − − −65 − J210; J211; J212 MIN. MAX. ±25 −25 −25 10 400 150 150 V V V UNIT mA mW °C °C 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. PARAMETER thermal resistance from junction to ambient; note 1 VALUE 250 UNIT K/W 1997 Dec 01 3 Philips Semiconductors Product specification N-channel field-effect transistors STATIC CHARACTERISTICS Tj = 25 °C. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage J210 J211 J212 VGSS IDSS gate-source forward voltage drain current J10 J11 J12 IGSS yfs reverse gate leakage current common-source transfer admittance J210 J211 J212 yos common source output admittance J210 J211 J212 DYNAMIC CHARACTERISTICS Tamb = 25 °C. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback .


J204 J210 J210


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