J308 Datasheet: SINGLE N-CHANNEL HIGH FREQUENCY JFET





J308 SINGLE N-CHANNEL HIGH FREQUENCY JFET Datasheet

Part Number J308
Description SINGLE N-CHANNEL HIGH FREQUENCY JFET
Manufacture Linear Integrated Systems
Total Page 2 Pages
PDF Download Download J308 Datasheet PDF

Features: U/J/SST308 SERIES Linear Integrated Syst ems FEATURES Direct Replacement For SIL ICONIX U/J/SST308 SERIES OUTSTANDING HI GH FREQUENCY GAIN LOW HIGH FREQUENCY NO ISE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Tempe ratures Storage Temperature Junction Op erating Temperature Maximum Power Dissi pation Continuous Power Dissipation (J/ SST) Continuous Power Dissipation (U) M aximum Currents Gate Current (J/SST) Ga te Current (U) Maximum Voltages Gate to Drain Gate to Source -25V -25V 10mA 20 mA 350mW 500mW D S SINGLE N-CHANNEL HI GH FREQUENCY JFET Gpg = 11.5dB NF = 2. 7dB TO-18 BOTTOM VIEW D 2 3 J SERIES T O-92 BOTTOM VIEW D S G G -55 to 150° C -55 to 135°C S 1 1 2 3 SST SERIE S SOT-23 TOP VIEW 1 3 2 G COMMON ELEC TRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(F) IG rDS(on) en NF Gpg gfg gog CHARACTERI STIC Gate to Source Breakdown Voltage G ate to Source Forward Voltage Gate Oper ating Current Drain to Source On Resistance Equivalent Noise Voltag.

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Linear Integrated Systems
U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS1
Gpg = 11.5dB
NF = 2.7dB
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
350mW
Continuous Power Dissipation (U)
500mW
Maximum Currents
Gate Current (J/SST)
10mA
Gate Current (U)
20mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
TO-18
BOTTOM VIEW
D 2 3G
S1
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNIT
BVGSS
VGS(F)
IG
rDS(on)
en
NF
Gpg
Gate to Source Breakdown Voltage
-25
Gate to Source Forward Voltage
0.7
Gate Operating Current
-15
Drain to Source On Resistance
35
Equivalent Noise Voltage
6
Noise Figure
f = 105MHz
f = 450MHz
1.5
2.7
Power Gain2
f = 105MHz
f = 450MHz
16
11.5
V
1
pA
nV/Hz
dB
gfg
Forward
Transconductance
f = 105MHz
f = 450MHz
gog
Output Conductance
f = 105MHz
f = 450MHz
14
13
0.16
0.55
mS
CONDITIONS
IG = -1µA, VDS = 0V
IG = 10mA, VDS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
VDS = 10V, ID = 10mA, f = 100Hz
VDS = 10V, ID = 10mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

     






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