N-Channel RF Amplifier
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
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Description
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
Features
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.
J309 J310
MMBFJ309 MMBFJ310
G
December 2010
GS D
TO-92
SOT-23
S
Mark MMBFJ309 : 6U
D MMBFJ310 : 6T
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDS VGS IGF TJ, Tstg
Drain-Source Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
25 -25 10 - 55 to +150
V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation Derate above 25°C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J309-J310 *MMBFJ309-310 625 350 5.0 2.8 127 357 556
Units
mW mW/°C °C/W °C/W
© 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
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