J309

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 J310 MMBFJ309 MMBFJ310 G December 2010 GS D TO-92 SOT-23 S Mark MMBFJ309 : 6U D MMBFJ310 : 6T Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VDS VGS IGF TJ, Tstg Drain-Source Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 -25 10 - 55 to +150 V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". Max. J309-J310 *MMBFJ309-310 625 350 5.0 2.8 127 357 556 Units mW mW/°C °C/W °C/W © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1 www...