JA101

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JA101 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 1998 Aug 04 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC501. PINNING PIN 1 2 3 base collector emitter JA101 DESCRIPTION 1 handbook, halfpage 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V IC = −10 mA; VCE = −5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 135 100 MIN. MAX. −50 −45 −200 500 600 − MHz V V mA mW UNIT 1998 Aug 04 2 Philips Semiconductors Product specification PNP general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 PARAMETER coll...