Dual Transistors. IMT1A Datasheet

IMT1A Transistors. Datasheet pdf. Equivalent

IMT1A Datasheet
Recommendation IMT1A Datasheet
Part IMT1A
Description General Purpose Transistor (Isolated Dual Transistors)
Feature IMT1A; EMT1 / UMT1N / IMT1A General purpose transistor (dual transistors) Datasheet Parameter VCEO IC   .
Manufacture Rohm
Datasheet
Download IMT1A Datasheet




Rohm IMT1A
EMT1 / UMT1N / IMT1A
General purpose transistor (dual transistors)
Datasheet
Parameter
VCEO
IC
 
Tr1 and Tr2
-50V
-150mA
 
lFeatures
1)Two 2SA1037AK chips in a EMT, UMT or
  SMT package.
2)Mounting possible with EMT3, UMT3 or
  SMT3automatic mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline
EMT6
UMT6
 
SMT6
EMT1
SC-107C
 
 
  
IMT1A
SOT-457
              
lInner circuit
EMT1 / UMT1N
UMT1N
SOT-363
 
 
 
IMT1A
lApplication
GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
lPackaging specifications
Part No.
Package
EMT1
UMT1N
IMT1A
EMT6
UMT6
SMT6
Package
size
1616
2021
2928
 
   
Taping Reel size Tape width
code (mm) (mm)
T2R
TN
T110
 
180
180
180
 
8
8
8
 
Basic
ordering
unit.(pcs)
8000
3000
3000
 
   
Marking
T1
T1
T1
 
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/8
20150515 - Rev.003



Rohm IMT1A
EMT1 / UMT1N / IMT1A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
EMT1/ UMT1N
IMT1A
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1 *2
PD*1 *3
Tj
Tstg
Values
-60
-50
-6
-150
150
300
150
-55 to +150
Unit
V
V
V
mA
mW/Total
mW/Total
lElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown voltage BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = -50μA
VCB = -60V
VEB = -6V
IC = -50mA, IB = -5mA
VCE = -6V, IC = -1mA
Transition frequency
fT
VCE = -12V, IE = 2mA,
f = 100MHz
Output capacitance
Cob
VCB = -12V, IE = 0A,
f = 1MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
Values
Min. Typ. Max.
-60 -
-
Unit
V
-50 - - V
-6 - - V
- - -100 nA
- - -100 nA
- - -500 mV
120 - 560 -
- 140 - MHz
- 4 5 pF
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/8
20150515 - Rev.003



Rohm IMT1A
EMT1 / UMT1N / IMT1A
lElectrical characteristic curves (Ta = 25°C)
<For Tr1 and Tr2 in common>
Fig.1 Ground Emitter Propagation
    Characteristics
      Datasheet
Fig.2 Grounded Emitter Output
    Characteristics
Fig.3 DC Current Gain vs. Collector
    Current (I)
Fig.4 DC Current Gain vs. Collector
    Current (lI)
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/8
20150515 - Rev.003







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