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IMT3A Dataheets PDF



Part Number IMT3A
Manufacturers Rohm
Logo Rohm
Description General purpose (dual transistors)
Datasheet IMT3A DatasheetIMT3A Datasheet (PDF)

EMT2 / EMT3 / UMT2N / IMT2A / IMT3A Transistors General purpose (dual transistors) EMT2 / EMT3 / UMT2N / IMT2A / IMT3A !Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. !External dimensions (Units : mm) EMT2 / EMT3 0.22 (4) (5) (6) (3) (2) !Equivalent circuits 0.13 1.2 1.6 (1) EMT2 / UMT2N (3) (2) (1) IMT2A (4) (5) (6) EMT3 (3) (2) (1) IMT3A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (4) (5) (6) (3) (2) (1) (4) (5) (6) (3) (2) (1) UMT2N (4) (3) 0.65.

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EMT2 / EMT3 / UMT2N / IMT2A / IMT3A Transistors General purpose (dual transistors) EMT2 / EMT3 / UMT2N / IMT2A / IMT3A !Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. !External dimensions (Units : mm) EMT2 / EMT3 0.22 (4) (5) (6) (3) (2) !Equivalent circuits 0.13 1.2 1.6 (1) EMT2 / UMT2N (3) (2) (1) IMT2A (4) (5) (6) EMT3 (3) (2) (1) IMT3A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (4) (5) (6) (3) (2) (1) (4) (5) (6) (3) (2) (1) UMT2N (4) (3) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.5 0.5 0.5 1.0 1.6 0.2 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (6) Symbol VCBO VCEO VEBO IC Limits −60 −50 −6 150 150(TOTAL) 300(TOTAL) 150 −55~+150 Unit V 0.15 1.25 2.1 V V mA mW (1) EMT2 / EMT3 / UMT2N IMT2A / IMT3A PC Tj Tstg ∗1 ∗2 ROHM : UMT6 EIAJ : SC-88 0~0.1 0.1Min. Each lead has same dimensions °C °C IMT2A / IMT3A (6) 0.3 Type Package Marking Code Basic ordering unit (pieces) EMT2 EMT6 T2 T2R 8000 EMT3 EMT6 T3 T2R 8000 UMT2N UMT6 T2 TR 3000 IMT2A SMT6 T2 T108 3000 IMT3A SMT6 T3 T108 3000 0.15 (4) 1.6 2.8 0.3Min. 0~0.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4 Max. − − − −0.1 −0.1 −0.5 560 − 5 Unit V V V µA µA V − MHz pF IC=−50µA IC=−1mA IE=−50µA VCB=−60V VEB=−6V Conditions IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=100MHz VCE=−12V, IE=0A, f=1MHz (3) !Package, marking, and packaging specifications (5) (2) (1) ∗ 0.9 2.0 (5) (2) .


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