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IMX8 Dataheets PDF



Part Number IMX8
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet IMX8 DatasheetIMX8 Datasheet (PDF)

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (IMT4) • Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • "Green" Device, Note 4 and 5 Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish a.

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Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (IMT4) • Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • "Green" Device, Note 4 and 5 Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). • Marking Information: KX8, See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.016 grams (approximate) IMX8 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR A B2 B1 E1 BC C2 E2 C1 H K J DF B2 B1 E1 L C2 E2 C1 SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 M J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 120 120 5.0 50 300 417 -55 to +150 Unit V V V mA mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Symbol Min Typ Max Unit Test Condition V(BR)CBO 120 ⎯ ⎯ V IC = 50μA V(BR)CEO 120 ⎯ ⎯ V IC = 1.0mA V(BR)EBO 5.0 ⎯ ⎯ V IE = 50μA ICBO ⎯ ⎯ 0.5 μA VCB = 100V IEBO ⎯ ⎯ 0.5 μA VEB = 4.0V hFE 180 ⎯ 820 ⎯ IC = 2.0mA, VCE = 6.0V VCE(SAT) ⎯ ⎯ 0.5 V IC = 10mA, IB = 1.0mA fT ⎯ 140 ⎯ MHz VCE = 12V, IC = 2.0mA, f = 100MHz Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30304 Rev. 8 - 2 1 of 3 www.diodes.com IMX8 © Diodes Incorporated PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 100 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 200 TA = 25°C hFE, DC CURRENT GAIN 600 500 TA = 75°C 400 300 200 TA = 25°C TA = -25°C 100 0 1.0 10.0 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 10.0 1.0 TA = 75°C TA = -25°C 0.100 TA = 150°C TA = 25°C TA = -50°C fT, GAIN BANDWIDTH PRODUCT (MHz) 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE(ON), BASE-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage 0.9 1,000 VCE = 5 Volts 100 10 IC, COLLECTOR CURRENT (mA) 0.010 1 6 5 4 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current IB = 16µA IB = 14µA IB = 12µA IB = 10µA 3 IB = 8µA 2 IB = 6µA 1 IB = 4µA 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage DS30304 Rev. 8 - 2 2 of 3 www.diodes.com IMX8 © Diodes Incorporated Ordering Information (Note 5 & 6 ) Notes: Device IMX8-7-F Packaging SOT-26 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Shipping 3000/Tape & Reel KX8 YM KX8 = Product Type Marking Code YM = Date Code Marking Y =Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X Mar Apr May Jun Jul Aug Sep Oct 3 4 5 6 78 9O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described.


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