x 1-BIT. IDT7187L Datasheet

IDT7187L 1-BIT. Datasheet pdf. Equivalent

IDT7187L Datasheet
Recommendation IDT7187L Datasheet
Part IDT7187L
Description CMOS STATIC RAM 64K (64K x 1-BIT)
Feature IDT7187L; CMOS STATIC RAM 64K (64K x 1-BIT) Integrated Device Technology, Inc. IDT7187S IDT7187L FEATURES: •.
Manufacture Integrated Device Technology
Datasheet
Download IDT7187L Datasheet




Integrated Device Technology IDT7187L
Integrated Device Technology, Inc.
CMOS STATIC RAM
64K (64K x 1-BIT)
IDT7187S
IDT7187L
FEATURES:
• High speed (equal access and cycle time)
— Military: 25/35/45/55/70/85ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (L version
only)
• JEDEC standard high-density 22-pin ceramic DIP, 22-pin
leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• Separate data input and output
• Input and output directly TTL-compatible
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.
Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—ISB and ISB1. ISB
provides low-power operation; ISB1 provides ultra-low-power
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30µW.
Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
A
A
A ROW
SELECT
A
A
A
CS
DATAIN
65,536-BIT
MEMORY ARRAY
VCC
GND
COLUMN I/O
DATAOUT
WE
AAAAAAA
2986 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. 6.2
AUGUST 1996
2986/7
1



Integrated Device Technology IDT7187L
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
PIN CONFIGURATIONS
A0
A1
A2
A3
A4
A5
A6
A7
DATAOUT
WE
GND
1 22
2 21
3 20
4 19
5 18
6 D22-1 17
7 16
8 15
9 14
10 13
11 12
VCC
A15
A14
A13
A12
A11
A10
A9
A8
DATAIN
CS
2986 drw 02
DIP
TOP VIEW
MILITARY TEMPERATURE RANGE
INDEX
A2
A3
A4
A5
A6
A7
DATAOUT
2 22 21
1
3
20
4 19
5 18
6 L22-1 17
7 16
8 15
9 14
10 11 12 13
A14
A13
A12
A11
A10
A9
A8
2986 drw 03
22-PIN LCC
TOP VIEW
PIN DESCRIPTIONS
Name
A0–A15
CS
WE
VCC
DATAIN
DATAOUT
GND
Description
Address Inputs
Chip Select
Write Enable
Power
Data Input
Data Output
Ground
TRUTH TABLE(1)
Mode
CS WE
Standby
H
X
Read
LH
Write
LL
NOTE:
1. H = VIH, L = VIL, X = don't care.
Output
High-Z
DOUT
High-Z
Power
Standby
Active
Active
2986 tbl 02
2986 tbl 01
6.2 2



Integrated Device Technology IDT7187L
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Com’l.
Mil. Unit
VTERM
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0
with Respect
to GND
V
TA
Operating
0 to +70 –55 to +125 °C
Temperature
TBIAS
Temperature –55 to +125 –65 to +135 °C
Under Bias
TSTG
Storage
–55 to +125 –65 to +150 °C
Temperature
PT Power Dissipation
1.0
1.0 W
IOUT
DC Output
50
50 mA
Current
NOTE:
2986 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (TA = +25°C, F = 1.0MHZ)
Symbol
Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 0V
8 pF
COUT Output Capacitance
VOUT = 0V
8
pF
NOTE:
2986 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min. Typ. Max. Unit
VCC
Supply Voltage
4.5 5.0 5.5 V
GND
Supply Voltage
000V
VIH Input High Voltage 2.2 — 6.0 V
VIL Input Low Voltage –0.5(1) — 0.8 V
NOTE:
2986 tbl 05
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
VCC
Military
–55°C to +125°C
0V 5V ± 10%
Commercial
0°C to +70°C
0V 5V ± 10%
2986 tbl 06
DC ELECTRICAL CHARACTERISTICS
(VCC = 5.0V ± 10%)
Symbol
Parameter
|ILI| Input Leakage Current
|ILO| Output Leakage Current
VOL Output Low Voltage
VOH Output High Voltage
Test Condition
VCC = Max.,
VIN = GND to VCC
VCC = Max., CS = VIH,
VOUT = GND to VCC
IOL = 10mA, VCC = Min.
IOL = 8mA, VCC = Min.
IOH = –4mA, VCC = Min.
MIL.
COM’L.
MIL.
COM’L.
IDT7187S
Min.
Max.
— 10
—5
— 10
—5
0.5
— 0.4
2.4 —
IDT7187L
Min.
Max.
—5
—2
—5
—2
— 0.5
— 0.4
2.4 —
Unit
µA
µA
V
V
2986 tbl 07
6.2 3







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