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IDT7188S Dataheets PDF



Part Number IDT7188S
Manufacturers Integrated Device Technology
Logo Integrated Device Technology
Description CMOS STATIC RAM 64K 16K x 4-BIT
Datasheet IDT7188S DatasheetIDT7188S Datasheet (PDF)

CMOS STATIC RAM 64K (16K x 4-BIT) Integrated Device Technology, Inc. IDT7188S IDT7188L FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version only) • Available in high-density industry standard 22-pin, 300 mil ceramic DIP • Produced with advanced CMOS technology • Inputs/outputs TTL-compatible • Military product compliant to MIL-STD-883, Class B DESCRIPTION: The IDT7188 is a.

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CMOS STATIC RAM 64K (16K x 4-BIT) Integrated Device Technology, Inc. IDT7188S IDT7188L FEATURES: • High-speed (equal access and cycle times) — Military: 25/35/45/55/70/85ns (max.) • Low power consumption • Battery backup operation — 2V data retention (L version only) • Available in high-density industry standard 22-pin, 300 mil ceramic DIP • Produced with advanced CMOS technology • Inputs/outputs TTL-compatible • Military product compliant to MIL-STD-883, Class B DESCRIPTION: The IDT7188 is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT’s highperformance, high-reliability technology — CMOS. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases power while enhancing system reliability. The low-power version (L) version also offers a battery backup data retention capability where the circuit typically consumes only 30µW operating from a 2V battery. All inputs and outputs are TTL-compatible and operate from a single 5V supply. The IDT7188 is packaged in 22-pin, 300 mil ceramic DIP providing excellent board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. FUNCTIONAL BLOCK DIAGRAM A0 VCC GND 65,536-BIT MEMORY ARRAY DECODER A13 I/O0 I/O1 I/O2 I/O3 COLUMN I/O INPUT DATA CONTROL CS WE The IDT logo is a registered trademark of Integrated Device Technology, Inc. 2989 drw 01 MILITARY TEMPERATURE RANGE ©1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. AUGUST 1996 6.3 DSC-2989/7 1 IDT7188S/L CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY TEMPERATURE RANGE PIN CONFIGURATIONS ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM Rating Com’l. Mil. –0.5 to +7.0 Unit V Terminal Voltage –0.5 to +7.0 with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current 0 to +70 –55 to +125 –55 to +125 1.0 50 A0 A1 A2 A3 A4 A5 A6 A7 A8 CS GND 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 D22-1 17 16 15 14 13 12 V CC A 13 A 12 A 11 A 10 A9 I/O 3 I/O 2 I/O 1 I/O 0 WE 2989 drw 02 TA TBIAS TSTG PT IOUT –55 to +125 –65 to +135 –65 to +150 1.0 50 °C °C °C W mA DIP TOP VIEW NOTE: 2989 tbl 03 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condit.


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