Bridge Diode(600V 2.3A)
SHINDENGEN
Bridge Diode
Square In-line Package
S3WB60
600V 2.3A
OUTLINE DIMENSIONS
Case : S3WB Unit : mm
RATINGS
● Ab...
Description
SHINDENGEN
Bridge Diode
Square In-line Package
S3WB60
600V 2.3A
OUTLINE DIMENSIONS
Case : S3WB Unit : mm
RATINGS
● Absolute Maximum Ratings Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current IO 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=40℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Current Squared Time I2t 1ms≦t<10ms Tc=25℃ ● Electrical Characteristics (Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=2A, Pulse measurement, Rating of per diode Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Thermal Resistance θjl junction to lead θja junction to ambient Ratings Unit -40~150 ℃ 150 ℃ 600 V 2.3 A 120 A 60 A2s Ratings Unit Max.1.05 V Max.10 μA Max.5.5 ℃/W Max.26.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S3WBx
100
Forward Voltage
10
Forward Current IF [A]
Tl=150°C [TYP] Tl=25 °C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
S3WBx
16
Forward Power Dissipation
Forward Power Dissipation PF [W]
14 12 10 8 6 4 2 0
SIN
0
1
2
3
4
5
6
7
Average Rectified Forward Current IO [A]
Tj= 150 °C Sine wave
S3WBx
2.4
Derating Curve
Average Rectified Forward Current IO [A]
2
l PCB Glass-epoxy substrate Solering land 5mmφ
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-lo...
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