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S524LB0XB1

Samsung semiconductor

32K/64K-bit Serial EEPROM

S524LB0X91/B0XB1 32K/64K-bit Serial EEPROM Data Sheet OVERVIEW The S524LB0D91/B0DB1 serial EEPROM has a 32/64 Kbits (4,...


Samsung semiconductor

S524LB0XB1

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Description
S524LB0X91/B0XB1 32K/64K-bit Serial EEPROM Data Sheet OVERVIEW The S524LB0D91/B0DB1 serial EEPROM has a 32/64 Kbits (4,096/8,192 bytes) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’ s most advanced CMOS technology. One of its major features is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 32 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524LB0D91/B0DB1 is its support for fast mode and standard mode. FEATURES I2C-Bus Interface Two-wire serial interface Automatic word address increment Operating Characteristics Operating voltage: 2.0 V to 5.5 V Operating current — Maximum write current: < 3 mA at 5.5 V EEPROM 32/64 Kbits (4,096/8,192 bytes) storage area 32-byte page buffer Typical 3-millisecond write cycle time with autoerase function Hardware-based write protection for the entire EEPROM (using the WP pin) EEPROM programming voltage generated on chip 1,000,000 erase/write cycles 100 years data retention — Maximum read current: < 500 µA at 5.5 V — Maximum stand-by current: < 2 µA at 2.0 V Operating temperature range: — – 25 °C to + 70 °C (Commercial) — – 40 °C to + 85 °C (Industrial) Operating clock frequencies — 100 kHz at standard mode — 400 kHz at fast mode Electrostatic discharge (ESD) — 5,000 ...




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