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S525T Dataheets PDF



Part Number S525T
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description N-Channel MOSFET
Datasheet S525T DatasheetS525T Datasheet (PDF)

S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current.

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S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150 –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (7) S525T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Gate - source cut-off voltage Test Conditions ID = 10 mA, –VGS = 4 V ±IGS = 10 mA, VDS = 0 ±VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 20 mA Symbol V(BR)DS ±V(BR)GSS ±IGSS IDSS –VGS(OFF) Min 20 7.5 5 Typ Max 12 50 14 2.5 Unit V V nA mA V Electrical AC Characteristics VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Feedback capacitance Output capacitance Noise figure Power gain Test Conditions Symbol y21s Cissg1 Crss Coss F Gps Min 14 Typ 16 2.7 25 1.0 1.0 25 Max Unit mS pF fF pF dB dB GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz www.vishay.de • FaxBack +1-408-970-5600 2 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 96 12159 2.0 C oss – Output Capacitance ( pF ) 1.5 1.0 0.5 VGS=0 ID=10mA f=1MHz 20 40 60 80 100 120 140 160 13614 0 0 3 6 9 12 Tamb – Ambient Temperature ( °C ) VDS – Drain Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 20 VGS= 0.6V ID – Drain Current ( mA ) 16 0.4V 12 8 –0.2V 4 0 0 13612 Figure 4. Output Capacitance vs. Drain Source Voltage 5 f=300MHz 4 250MHz 200MHz 150MHz 2 100MHz 1 0 50MHz VDS=10V ID=10mA f=50...300MHz 0.2V 0 Im ( y 11 ) ( mS ) 10 13615 3 –0.4V –0.6V 2 4 6 8 0 0.2 0.4 0.6 0.8 1.0 VDS – Drain Source Voltage ( V ) Re (y11) ( mS ) Figure 2. Drain Current vs. Drain Source Voltage 4.0 Cissg – Gate Input Capacitance ( pF ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –2.0 13613 Figure 5. Short Circuit Input Admittance 0.00 –0.01 Im ( y 12 ) ( mS ) –0.02 –0.03 200MHz –0.04 –0.05 –0.01 13616 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz 150MHz VDS=10V f=1MHz –1.5 –1.0 –0.5 0.0 0.5 1.0 250MHz f=300MHz –0.008 –0.006 –0.004 –0.002 0.000 VGS – Gate Source Voltage ( V ) Re (y12) ( mS ) Figure 3. Gate Input Capacitance vs. Gate Source Voltage Figure 6. Short Circuit Reverse Transfer Admittance Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (7) S525T Vishay Telefunken 0 –2 Im ( y 21 ) ( mS ) –4 –6 –8 –10 0 13617 2.0 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz 150MHz 200MHz 250MHz f=300MHz Im ( y 22 ) ( mS ) 1.5 f=300MHz 250MHz 200MHz 150MHz 0.5 100MHz 50MHz 0 4 8 12 16 20 13618 1.0 VDS=10V ID=10mA f=50...300MHz 0.3 0.4 0.5 0 0.1 0.2 Re (y21) ( mS ) Re (y22) ( mS ) Figure 7. Short Circuit Forward Transfer Admittance Figure 8. Short Circuit Output Admittance www.vishay.de • FaxBack +1-408-970-5600 4 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken VDS = 10 V, ID = 10 mA , Z0 = 50 W S11 j 120° j0.5 j2 150° j0.2 j5 30° S12 90° 60° 300 MHz 150 0 ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ 0.2 0.5 1 2 5 300 MHz –j0.5 –j2 –j 50 1 180° 50 0.004 0.008 0° 150 –j5 –150° –30° –j0.2 –120° 13 554 13 555 –90° –60° Figure 9. Figure 11. S21 120° 90° 60° S22 j j0.5 150° 150 50 0.8 1.6 300 MHz 30° j0.2 j5 j2 180° 0° 0 ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ 0.2 0.5 1 2 5 –j0.5 –j2 –j 50 300 MHz –j5 –j0.2 –150° –30° –120° 13 556 –90° –60° 13 557 Figure 10. Figure 12. Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 5 (7) S525T Vishay Telefunken Dimensions in mm 12780 www.vishay.de • FaxBack +1-408-970-5600 6 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with resp.


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