Document
S525T
Vishay Telefunken
N–Channel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device. Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D Integrated gate protection diodes D Low feedback capacitance D Low noise figure
1
G
13 581 94 9280
D
2
3
12624
S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain
S
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID ±IGSM Ptot TCh Tstg Value 20 30 10 200 150 –55 to +150 Unit V mA mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Document Number 85045 Rev. 3, 20-Jan-99
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S525T
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Gate - source cut-off voltage Test Conditions ID = 10 mA, –VGS = 4 V ±IGS = 10 mA, VDS = 0 ±VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 20 mA Symbol V(BR)DS ±V(BR)GSS ±IGSS IDSS –VGS(OFF) Min 20 7.5 5 Typ Max 12 50 14 2.5 Unit V V nA mA V
Electrical AC Characteristics
VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Feedback capacitance Output capacitance Noise figure Power gain Test Conditions Symbol y21s Cissg1 Crss Coss F Gps Min 14 Typ 16 2.7 25 1.0 1.0 25 Max Unit mS pF fF pF dB dB
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz
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Document Number 85045 Rev. 3, 20-Jan-99
S525T
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
300 P tot – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0
96 12159
2.0 C oss – Output Capacitance ( pF )
1.5
1.0
0.5
VGS=0 ID=10mA f=1MHz
20
40
60
80
100 120 140 160
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0 0
3
6
9
12
Tamb – Ambient Temperature ( °C )
VDS – Drain Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
20 VGS= 0.6V ID – Drain Current ( mA ) 16 0.4V 12 8 –0.2V 4 0 0
13612
Figure 4. Output Capacitance vs. Drain Source Voltage
5 f=300MHz 4 250MHz 200MHz 150MHz 2 100MHz 1 0 50MHz VDS=10V ID=10mA f=50...300MHz
0.2V 0
Im ( y 11 ) ( mS ) 10
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3
–0.4V –0.6V 2 4 6 8
0
0.2
0.4
0.6
0.8
1.0
VDS – Drain Source Voltage ( V )
Re (y11) ( mS )
Figure 2. Drain Current vs. Drain Source Voltage
4.0 Cissg – Gate Input Capacitance ( pF ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –2.0
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Figure 5. Short Circuit Input Admittance
0.00 –0.01 Im ( y 12 ) ( mS ) –0.02 –0.03 200MHz –0.04 –0.05 –0.01
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VDS=10V ID=10mA f=50...300MHz
50MHz 100MHz 150MHz
VDS=10V f=1MHz –1.5 –1.0 –0.5 0.0 0.5 1.0
250MHz f=300MHz –0.008 –0.006 –0.004 –0.002 0.000
VGS – Gate Source Voltage ( V )
Re (y12) ( mS )
Figure 3. Gate Input Capacitance vs. Gate Source Voltage
Figure 6. Short Circuit Reverse Transfer Admittance
Document Number 85045 Rev. 3, 20-Jan-99
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S525T
Vishay Telefunken
0 –2 Im ( y 21 ) ( mS ) –4 –6 –8 –10 0
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2.0 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz 150MHz 200MHz 250MHz f=300MHz Im ( y 22 ) ( mS ) 1.5 f=300MHz 250MHz 200MHz 150MHz 0.5 100MHz 50MHz 0 4 8 12 16 20
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1.0
VDS=10V ID=10mA f=50...300MHz 0.3 0.4 0.5
0
0.1
0.2
Re (y21) ( mS )
Re (y22) ( mS )
Figure 7. Short Circuit Forward Transfer Admittance
Figure 8. Short Circuit Output Admittance
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Document Number 85045 Rev. 3, 20-Jan-99
S525T
Vishay Telefunken VDS = 10 V, ID = 10 mA , Z0 = 50 W S11
j 120° j0.5 j2 150° j0.2 j5 30°
S12
90° 60°
300 MHz 150
0
ÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁ
0.2 0.5 1 2 5 300 MHz –j0.5 –j2 –j
50
1
180°
50
0.004
0.008
0°
150 –j5 –150° –30°
–j0.2
–120°
13 554 13 555
–90°
–60°
Figure 9.
Figure 11.
S21
120° 90° 60°
S22
j j0.5 150° 150 50 0.8 1.6 300 MHz 30° j0.2 j5 j2
180°
0°
0
ÁÁÁ ÁÁÁ ÁÁÁÁÁÁ
0.2 0.5 1 2 5 –j0.5 –j2 –j
50
300 MHz –j5
–j0.2 –150° –30°
–120°
13 556
–90°
–60°
13 557
Figure 10.
Figure 12.
Document Number 85045 Rev. 3, 20-Jan-99
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S525T
Vishay Telefunken Dimensions in mm
12780
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Document Number 85045 Rev. 3, 20-Jan-99
S525T
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with resp.