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S5566J

Toshiba Semiconductor

GENERAL PURPOSE RECTIFIER APPLICATIONS

S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N GENERAL PURPOSE RECTIFI...


Toshiba Semiconductor

S5566J

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S5566B,S5566G,S5566J,S5566N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5566B,S5566G,S5566J,S5566N GENERAL PURPOSE RECTIFIER APPLICATIONS l Average Forward Current : IF (AV) = 1A Unit: mm l Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC S5566B Repetitive Peak Reverse Voltage S5566G S5566J S5566N Average Forward Current Peak One Cycle Surge Forward Current (Non Repetitive) Junction Temperature Storage Temperature Range S5566B S5566G IFSM S5566J S5566N Tj Tstg IF (AV) VRRM SYMBOL RATING 100 400 600 1000 1.0 45 (50Hz) 49 (60Hz) 30 (50Hz) 33 (60Hz) −40~150 −40~150 °C °C A A V UNIT JEDEC JEITA TOSHIBA Weight: 0.225g ― ― 3−3E1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current SYMBOL VFM IRRM TEST CONDITION IFM = 1.0A VRRM = Rated MIN ― ― TYP. ― ― MAX 1.2 10 UNIT V µA MARKING 1 2001-07-10 S5566B,S5566G,S5566J,S5566N 2 2001-07-10 S5566B,S5566G,S5566J,S5566N RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSH...




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