Document
S592T/S592TR/S592TRW
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
AGC RF in C block C block G2 G1 S D RF out C block
94 9296
RFC VDD
Features
D D D D
Integrated gate protection diodes Low noise figure 20mS forward transadmittance Biasing network on chip
D Improved cross modulation at gain reduction D High AGC-range D SMD package
2
1
1
2
94 9279
13 579
94 9278
95 10831
3
4
4
3
S592T Marking: 592 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S592TR Marking: 29R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
S592TRW Marking: W5L Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85046 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (6)
S592T/S592TR/S592TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source Voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 8 ID 20 ±IG1/G2SM 10 ±VG1/G2SM 6 Ptot 160 TCh 150 Tstg –55 to +150 Unit V mA mA V mW °C °C
Tamb ≤ 78 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 –VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 mA Symbol Min ±V(BR)G1SS 7 ±V(BR)G2SS +IG1SS –IG1SS ±IG2SS IDSS IDSP VG2S(OFF) 50 7 7 Typ Max Unit 10 V 10 50 100 20 500 14 V
mA mA
nA
mA
mA V
10 1.0
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor.
www.vishay.de • FaxBack +1-408-970-5600 2 (6)
Document Number 85046 Rev. 3, 20-Jan-99
S592T/S592TR/S592TRW
Vishay Telefunken Electrical AC Characteristics
VDS = 5 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol Min y21s 17 Cissg1 C.