S60D90

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives S60D90 Thru S60D100 SCHOTTKY BARRIER RECTIFIERS 60 AMPERES 90-100 VOLTS TO-3P MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectifier Forward Current Per diodes Total Device (Rated VR),TC=100 IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase, 60Hz) IFSM Operating and Storage Junction Temperature Range TJ , TSTG S60D90 90 S60D100 100 63 70 30 60 60 450 -65 to +150 Unit V V A A A THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθ j-c 1.5 /w ELECTRIAL CHARACTERISTICS Char...