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S6903G

Toshiba Semiconductor

AC POWER CONTROL APPLICATIONS

S6903G,S6903J TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE S6903G,S6903J AC POWER CONTROL APPLICATIONS l...


Toshiba Semiconductor

S6903G

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S6903G,S6903J TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE S6903G,S6903J AC POWER CONTROL APPLICATIONS l High Rush Current Capability Optimal for controlling actuators where high rush current may flow. : ITRM = 120A (n = 100k cycle, Tc = 45°C) l R.M.S On−State Current : IT (RMS) = 20A l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage S6903G S6903J SYMBOL VDRM IT (RMS) ITSM ITRM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 RATING 400 600 20 180 (50Hz) 200 (60Hz) 120 167 50 5 0.5 10 2 −40~125 −40~125 UNIT V A A A A s A / µs W W V A °C °C 2 R.M.S On−State Current (Full Sine Waveform Tc = 100°C) Peak One Cycle Surge On−State Current (Non−Repetitive) Repetitive Surge On−State Current (Note 1) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2.0 g TO−220AB ― 13−10G1A MARKING NUMBER *1 TYPE SYMBOL S6903G S6903J MARK S6903G S6903J *2 Example 8A: January 1998 8B: February 1998 8L: December 1998 1 2001-07-10 S6903G,S6903J ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage at Commut...




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