PTF10020

PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 150 960 MHz Output Power (Watts) 125 100 75 860 MHz 50 900 MHz A-1 100 20 234 569 813 VDD = 28 V 25 0 0 1 2 3 4 5 6 7 IDQ = 1.4 A Total Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.4 A Total, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.4 A Total, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.4 A Total, f = 959.9, 960 MHz—all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. P-1dB h Y 125 50 — 130 55 — — — 10:1 Watts % — Symbol Gps Min 11.0 Typ 12.5 Max — Units dB e 1 PTF 10020 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 6...