JAN2N3636 Datasheet PDF | Microsemi Corporation





(PDF) JAN2N3636 Datasheet PDF

Part Number JAN2N3636
Description PNP SILICON AMPLIFIER TRANSISTOR
Manufacture Microsemi Corporation
Total Page 2 Pages
PDF Download Download JAN2N3636 Datasheet PDF

Features: TECHNICAL DATA PNP SILICON AMPLIFIER TRA NSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM R ATINGS Ratings Collector-Emitter Voltag e Collector-Base Voltage Emitter-Base V oltage Collector Current Total Power Di ssipation Symbol VCEO VCBO VEBO IC 2N 3634* 2N3635* 140 140 2N3636* 2N3637* 175 175 Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W PT @ TC = +250C(2) 5.0 W 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg *Electrical characteristics for “L” suffix devices are identica l to the “non L” corresponding devi ces 1) Derate linearly 5.71 mW/0C for T A > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C TO-5* 2N3634, 2N3635 2N3636, 2N3637 *See appendix A for pack age outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Cha racteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitt.

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JAN2N3636 datasheet
TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
140 175
140 175
5.0
1.0
1.0
5.0
-65 to +200
Vdc
Vdc
Vdc
Adc
W
W
0C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
Emitter-Base Cutoff Current
2N3634, 2N3635
ICBO
VEB = 3.0 Vdc
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
IEBO
ICEO
Min.
140
175
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
Max.
Unit
Vdc
ηAdc
100 µAdc
10
ηAdc
50 µAdc
10
10 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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