JANHCA2N2484 Datasheet: SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC





JANHCA2N2484 SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC Datasheet

Part Number JANHCA2N2484
Description SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
Manufacture STMicroelectronics
Total Page 19 Pages
PDF Download Download JANHCA2N2484 Datasheet PDF

Features: The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 Nove mber 2000. INCH-POUND MIL-PRF-19500/37 6E 31 August 2000 SUPERSEDING MIL-PRF-1 9500/376D 21 August 1998 PERFORMANCE SP ECIFICATION SEMICONDUCTOR DEVICE, TRAN SISTOR, NPN, SILICON, LOW-POWER TYPES 2 N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This spe cification is approved for use by all D epartments and Agencies of the Departme nt of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance r equirements for NPN, silicon, low-power transistors. Four levels of product as surance is provided for each device typ e as specified in MIL-PRF-19500. Two le vels of product assurance are provided for die. 1.2 Physical dimensions. See f igure 1 (similar to T0-18), figures 2 a nd 3 (surface mount case outlines UA an d UB), and figures 4 and 5 (die). 1.3 M aximum ratings. Types PT TA = +25°C VCBO VEBO VCEO IC TJ and TSTG RθJA RθJC mW 2N2484 2N2484.

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 November 2000.
INCH-POUND
MIL-PRF-19500/376E
31 August 2000
SUPERSEDING
MIL-PRF-19500/376D
21 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and
UB), and figures 4 and 5 (die).
1.3 Maximum ratings.
Types
PT
TA = +25°C
VCBO
VEBO
VCEO
IC
TJ and TSTG
RθJA
RθJC
mW
V dc
V dc
V dc
2N2484
500 (1)
60
6 60
2N2484UA
650 (2)
60
6 60
2N2484UB
500 (1)
60
6 60
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C
(2) Derate linearly at 4.76 mW/°C above TA = +63.5°C.
1.4 Primary electrical characteristics.
mA dc
50
50
50
°C
-65 to +200
-65 to +200
-65 to +200
°C/W
325
210
325
°C/W
146
160
146
Limits
hfe
VCE = 5 V dc
IC = 1 mA dc
f = 1 kHz
Cobo
IE = 0
VCB = 5 V dc
100 kHz f 1 MHz
pF
Min 250
Max 900
(1) Pulsed (see 4.5.1).
5.0
|hfe|2
IC = 500 µA dc
VCE = 5 V dc
f = 30 MHz
2.0
7.0
VCE(sat) (1)
IC = 1.0 mA dc
IB = 0.1 mA dc
V dc
0.3
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

                    
                    






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