4N47 4N48 4N49
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
Mii
OPTOELECTRONIC PRODUCTS{PRIVATE } DIVISION
Features: • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation
Applications: • • • • • Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control
DESCRIPTION Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS Input to Output Voltage............................................................................................................................................................. 1kV Emitter-Collector Voltage............................................................................................................................................................7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V Collector-Base Voltage .............................................................................................................................................................45V Reverse Input Voltage ...............................................................................................................................................................2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A Continuous Collector Current ................................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW Storage Temperature........................................................................................................................................... -65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions
6 LEADS
Schematic Diagram
0.016Ø [0.41] 0.019Ø[0.48] 0.040 [1.02] MAX. 0.305 [7.75] 0.335 [8.51] 0.500 [12.70] MIN. 0.155 [3.94] 0.185 [4.70]
5
5A
6 7 1 3 2
C
3
0.022Ø [5.08]
0.045 [1.14] 0.029 [0.73]
E 1 7 K B 2
45° 0.034 [0.864] 0.028 [0.711]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL:
[email protected]
3 - 14
4N47, 4N48, and 4N49
*ELECTRICAL CHARACTERISTICS PARAMETER
Input Diode Static Reverse Current Input Diode Static Forward Voltage -55°C +25°C +100°C
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS
TA = 25°C Unless otherwise specified
SYMBOL
IR VF
MIN
1.0 0.8 0.7
TYP
MAX
100 1.7 1.5 1.3
UNITS
µA V
TEST CONDITIONS
VR = 2V IE = 10mA
NOTE
1.4
*OUTPUT TRANSISTOR TA = 25°C Unless otherwise specified PARAMETER SYMBOL MIN
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO
°
TYP
MAX
UNITS
V V V
TEST CONDITIONS
IC = 100µA, IB = 0, IF = 0 IC = 1mA, IB = 0, IF = 0 IC = 0, IE = 100µA, IF = 0
NOTE
45 40 7
*COUPLED CHARACTERISTICS PARAMETER
On State Collector Current
TA = 25 C Unless otherwise specified
SYMBOL
4N47 4N48 4N49 4N47 4N48 4N49 4N47 4N48 4N49 IC(ON)
MIN
0.5 1.0 2.0 0.7 1.4 2.8 0.5 1.0 2.0
TYP
MAX
5 10
UNITS
mA
TEST CONDITIONS
VCE = 5V, IB = 0, IF = 1mA
NOTE
On State Collector Current -55°C On State Collector Current +100°C Off State Collector Current Off State Collector Current +25°C +100°C
mA VCE = 5V, IB = 0, IF = 2mA mA VCE = 5V, IB = 0, IF = 2mA 100 100 0.3 0.3 0.3 nA
µA
IC(ON)
IC(ON) IC(OFF) IC(OFF)
2
VCE = 20V, IB = 0, IF = 0mA VCE = 20V, IB = 0, IF = 0mA IC = 0.5mA, IB = 0, IF = 2mA IC = 1mA, IB = 0, IF = 2mA IC = 2mA, IB = 0, IF = 2mA VIN-OUT = 1kV 1 1
Collector-Emitter Saturation Voltage
4N47 4N48 4N49
VCE(SAT) VCE(SAT) VCE(SAT) RI-O CI-O 10
11
V V V
Input to Output Resistance Input to Output Capacitance Rise Time/ Fall Time Phototransistor Operatio.