JANSR2N7278

JANSR2N7278 Formerly FRL234R4 June 1998 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure. Also available at other radiation and screening levels. See us on the web, Intersil’s home page: http://www.semi.harris.com. Contact your local Intersil Sales Office for additional information. Features 4A, 250V, rDS(ON) = 0.700Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM Photo Current - 4nA Per-RAD(Si)/s Typically Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Infor...