JANTX2N2222A Datasheet: NPN SILICON SWITCHING TRANSISTOR





JANTX2N2222A NPN SILICON SWITCHING TRANSISTOR Datasheet

Part Number JANTX2N2222A
Description NPN SILICON SWITCHING TRANSISTOR
Manufacture Microsemi Corporation
Total Page 6 Pages
PDF Download Download JANTX2N2222A Datasheet PDF

Features: 6 Lake Street, Lawrence, MA 01841 1-800- 446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi .com TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL -PRF-19500/255 DEVICES 2N2221A 2N2221A L 2N2221AUA 2N2221AUB 2N2221AUBC * * Av ailable to JANS quality level only. 2N 2222A 2N2222AL 2N2222AUA 2N2222AUB 2N22 22AUBC * LEVELS JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / T est Conditions Symbol Value Unit Col lector-Emitter Voltage Collector-Base V oltage Emitter-Base Voltage Collector C urrent Total Power Dissipation @ TA = + 25°C Operating & Storage Junction Temp erature Range VCEO VCBO VEBO IC PT Top , Tstg 50 75 6.0 800 0.5 -65 to +200 Vdc Vdc Vdc mAdc W °C THERMAL CHARACT ERISTICS Parameters / Test Conditions Symbol Thermal Resistance, Junction-t o-Ambient 2N2221A, L 2N2221AUA 2N2221A UB, UBC 2N2222A, L 2N2222AUA 2N2222AUB , UBC RθJA Note: Consult 19500/255 for thermal performance curve.

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
* Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
50
75
6.0
800
0.5
-65 to +200
Vdc
Vdc
Vdc
mAdc
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
RθJA
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above TA > +37.5°C
2. Derate linearly 4.76mW/°C above TA > +63.5°C
Max.
325
210
325
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 60Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
Symbol
Min. Max. Unit
V(BR)CEO
ICBO
IEBO
ICES
50
Vdc
10 μAdc
10 ηAdc
10 μAdc
10 ηAdc
50 ηAdc
T4-LDS-0060 Rev. 2 (100247)
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
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