DatasheetsPDF.com

JANTX2N3501

Microsemi Corporation

NPN BIPOLAR TRANSISTOR

580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N3501 Features • • • • Meets MIL-S-19500/...


Microsemi Corporation

JANTX2N3501

File Download Download JANTX2N3501 Datasheet


Description
580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N3501 Features Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS 150 Volts 500mAmps NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current—Continuous Total Device Dissipation o @ T A = 25 C o Derate above 25 C Total Device Dissipation o @ T C = 25 C o Derate above 25 C Operating Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL VCEO VCBO VEBO IC PD MAX. 150 150 6.0 300 1.0 5.71 PD 5.0 28.6 -55 to +200 -55 to +200 175 35 Watts o mW/ C o C o o o UNIT Vdc Vdc Vdc mAdc Watt o mW/ C TJ TS RθJA RθJC C C/W C/W Mechanical Outline Datasheet# MSC0282A 5/19/97 2N3501 Electrical Parameters (TA @ 25° C unless otherwise specified) CHARACTERISTICS Off Characteristics Collector-Emitter Breakdown Voltage(1) (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 µAdc, IE = 0) Emitter-Base Breakdown Voltage (I E = 10 µAdc, IC = 0) Collector Cutoff Current (V CB = 75 Vdc, I E = 0) o (V CB = 75 Vdc, I E = 0, TA = 150 C) Emitter Cutoff Current (V EB(off) = 4.0 Vdc, I C = 0) D.C. Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc)(1) (I C = 150 mAdc, V CE = 10 Vdc)(1) (I c = 150 mAdc, V CE = 10Vdc) @ 55C (I C = 300 mAdc, V CE = 10 Vdc...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)