JANTX2N6760 Datasheet: POWER MOSFET N-CHANNEL





JANTX2N6760 POWER MOSFET N-CHANNEL Datasheet

Part Number JANTX2N6760
Description POWER MOSFET N-CHANNEL
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6760 Datasheet PDF

Features: PD - 90335F IRF330 REPETITIVE AVALANCH E AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6760 JANTXV2N6760 THRU-HOLE (T O-204AA/AE) [REF:MIL-PRF-19500/542] 40 0V, N-CHANNEL Product Summary Part Nu mber BVDSS IRF330 400V RDS(on) 1.00 ID 5.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transist ors. The efficient geometry and unique processing of this latest “State of t he Art” design achieves: very low on- state resistance combined with high tra nsconductance; superior reverse energy and diode recovery dv/dt capability. T he HEXFET transistors also feature all of the well established advantages of M OSFETs such as voltage control, very fa st switching, ease of paralleling and t emperature stability of the electrical parameters. They are well suited for a pplications such as switching power sup plies, motor controls, inverters, chopp ers, audio amplifiers and high energy p ulse circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/.

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PD - 90335F
IRF330
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6760
JANTXV2N6760
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
400V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF330
400V
RDS(on)
1.00
ID
5.5A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.5
3.5 A
22
75 W
0.60
W/°C
±20 V
1.7 mJ
5.5 A
— mJ
4.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

                    






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