JANTX2N6762 Datasheet | TRANSISTORS N-CHANNEL





JANTX2N6762 PDF File (Datasheet) Download

Part Number JANTX2N6762
Description TRANSISTORS N-CHANNEL
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6762 PDF File

Features: PD - 90336F IRF430 REPETITIVE AVALANCH E AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6762 JANTXV2N6762 THRU-HOLE (T O-204AA/AE) [REF:MIL-PRF-19500/542] 50 0V, N-CHANNEL Product Summary Part Nu mber BVDSS IRF430 500V RDS(on) 1.5 ID 4.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transist ors. The efficient geometry and unique processing of this latest “State of t he Art” design achieves: very low on- state resistance combined with high tra nsconductance; superior reverse energy and diode recovery dv/dt capability. Th e HEXFET transistors also feature all o f the well established advantages of MO SFETs such as voltage control, very fas t switching, ease of paralleling and te mperature stability of the electrical p arameters. They are well suited for app lications such as switching power suppl ies, motor controls, inverters, chopper s, audio amplifiers and high energy pul se circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt.

Keywords: JANTX2N6762, datasheet, pdf, International Rectifier, TRANSISTORS, N-CHANNEL, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

PD - 90336F
IRF430
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6762
JANTXV2N6762
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF430
500V
RDS(on)
1.5
ID
4.5A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
4.5
3.0 A
18
75 W
0.6 W/°C
±20 V
1.1 mJ
4.5 A
— mJ
3.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

                    






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)