JANTX2N6764 Datasheet: POWER MOSFET N-CHANNEL





JANTX2N6764 POWER MOSFET N-CHANNEL Datasheet

Part Number JANTX2N6764
Description POWER MOSFET N-CHANNEL
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6764 Datasheet PDF

Features: PD - 90337G REPETITIVE AVALANCHE AND dv /dt RATED HEXFETTRANSISTORS IRF150 JANTX2N6764 THRU-HOLE (TO-204AA/AE) J ANTXV2N6764 [REF:MIL-PRF-19500/543] P roduct Summary 100V, N-CHANNEL Part N umber BVDSS RDS(on) ID IRF150 100V 0. 055Ω 38A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transisto rs. The efficient geometry and unique p rocessing of this latest “State of th e Art” design achieves: very low on-s tate resistance combined with high tran sconductance; superior reverse energy a nd diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOS FETs such as voltage control, very fast switching, ease of paralleling and tem perature stability of the electrical pa rameters. They are well suited for appl ications such as switching power suppli es, motor controls, inverters, choppers , audio amplifiers and high energy puls e circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt .

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PD - 90337G
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
IRF150
JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
Product Summary
100V, N-CHANNEL
Part Number BVDSS RDS(on) ID
IRF150
100V 0.05538A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
38
24 A
152
150 W
1.2 W/°C
±20 V
150 mJ
38 A
15 mJ
5.5
-55 to 150
V/ns
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
08/21/01

                    






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