Document
PD - 90339F
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
IRF350 JANTX2N6768
JANTXV2N6768
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF350
400V
RDS(on) 0.300Ω
ID 14A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂
TJ TSTG
Operating Junction Storage Temperature Range Lead Temperature Weight
Units
14 9.0 A
56
150 W
1.2 W/°C
±20 V
11.3
mJ
14 A
15 mJ
4.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
IRF350
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400 — — V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
— — 0.300 — — 0.400 Ω
VGS = 10V, ID =9.0A➃ VGS =10V, ID =14A ➃
VGS(th) gfs
Gate Threshold Voltage Forward Transconductance
2.0 — 4.0 V 6.0 — — S ( )
Ω
VDS = VGS, ID =250µA VDS > 15V, IDS =9.0A➃
IDSS
Zero Gate Voltage Drain Current
— — 25 — — 250 µA
VDS=320V, VGS=0V VDS =320V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
— — 100 nA
IGSS Gate-to-Source Leakage Reverse — — -100
VGS =20V VGS =-20V
Qg Total Gate Charge
52 — 110
VGS =10V, ID=14A
Qgs Gate-to-Source Charge
5.0 — 18 nC
VDS =200V
Qgd
Gate-to-Drain (‘Miller’) Charge
25 — 65
td(on) tr td(off)
Turn-On Delay Time Rise Time Turn-Off Delay Time
— — 35 — — 190
ns — — 170
VDD =200V, ID =14A, RG =2.35Ω
tf Fall Time
— — 130
LS + LD
Total Inductance
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
Ciss Input Capacitance Coss Output Capacitance Crss Reverse.