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JANTX2N6768 Dataheets PDF



Part Number JANTX2N6768
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet JANTX2N6768 DatasheetJANTX2N6768 Datasheet (PDF)

PD - 90339F REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRF350 JANTX2N6768 JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS IRF350 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transcond.

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PD - 90339F REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRF350 JANTX2N6768 JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS IRF350 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Units 14 9.0 A 56 150 W 1.2 W/°C ±20 V 11.3 mJ 14 A 15 mJ 4.0 V/ns -55 to 150 oC 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 01/22/01 IRF350 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State Resistance — — 0.300 — — 0.400 Ω VGS = 10V, ID =9.0A➃ VGS =10V, ID =14A ➃ VGS(th) gfs Gate Threshold Voltage Forward Transconductance 2.0 — 4.0 V 6.0 — — S ( ) Ω VDS = VGS, ID =250µA VDS > 15V, IDS =9.0A➃ IDSS Zero Gate Voltage Drain Current — — 25 — — 250 µA VDS=320V, VGS=0V VDS =320V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 nA IGSS Gate-to-Source Leakage Reverse — — -100 VGS =20V VGS =-20V Qg Total Gate Charge 52 — 110 VGS =10V, ID=14A Qgs Gate-to-Source Charge 5.0 — 18 nC VDS =200V Qgd Gate-to-Drain (‘Miller’) Charge 25 — 65 td(on) tr td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time — — 35 — — 190 ns — — 170 VDD =200V, ID =14A, RG =2.35Ω tf Fall Time — — 130 LS + LD Total Inductance — 6.1 — nH Measured from the center of drain pad to center of source pad Ciss Input Capacitance Coss Output Capacitance Crss Reverse.


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