REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS...
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®
TRANSISTORS THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
BVDSS
IRFF120
100V
RDS(on) ID 0.30 6.0A
PD-90426E
IRFF120 JANTX2N6788 JANTXV2N6788
100V, N-CHANNEL
REF: MIL-PRF-19500/555
Description
The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET
transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.
The HEXFET
transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
TO-39
Features
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1B per MIL-STD-750,
Method 1020
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Symbol
Parameter
Value
ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C
IDM @ TC = 25°C PD @ TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current
Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Stora...