JANTX2N6800 Datasheet PDF | International Rectifier





(PDF) JANTX2N6800 Datasheet

Part Number JANTX2N6800
Description POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
Manufacture International Rectifier
Total Page 6 Pages
PDF Download Download JANTX2N6800 Datasheet PDF

Features: Previous Datasheet Index Next Data She et Provisional Data Sheet No. PD-9.432B HEXFET ® JANTX2N6800 POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [G ENERIC:IRFF330] N-CHANNEL Product Summa ry Part Number JANTX2N6800 JANTXV2N6800 BVDSS 400V RDS(on) 1.0Ω ID 3.0A 400 Volt, 1.0Ω HEXFET HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transi stors. The efficient geometry achieves very low onstate resistance combined wi th high transconductance. HEXFET transi stors also feature all of the well-esta blish advantages of MOSFETs, such as vo ltage control, very fast switching, eas e of paralleling and electrical paramet er temperature stability. They are well -suited for applications such as switch ing power supplies, motor controls, inv erters, choppers, audio amplifiers, and high energy pulse circuits, and virtua lly any application where high reliabil ity is required. Features: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements.

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JANTX2N6800 datasheet
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Index
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Provisional Data Sheet No. PD-9.432B
JANTX2N6800
HEXFET® POWER MOSFET
JANTXV2N6800
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF330]
N-CHANNEL
400 Volt, 1.0HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6800
JANTXV2N6800
400V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.0
ID
3.0A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6800, JANTXV2N6800 Units
3.0
2.0 A
12.0
25 W
0.20
W/K 
±20 V
4.0 V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
oC
g
To Order

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