JANTX2N6804 Datasheet: TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)





JANTX2N6804 TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) Datasheet

Part Number JANTX2N6804
Description TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6804 Datasheet PDF

Features: PD - 90549C IRF9130 REPETITIVE A V ALAN CHE AND dv/dt RATED JANTX2N6804  HEX FET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 1 00V, P-CHANNEL Product Summary Part Num ber IRF9130 BVDSS -100V RDS(on) 0.30 ID -11A The HEXFETtechnology is t he key to International Rectifier’s a dvanced line of power MOSFET transistor s. The efficient geometry and unique pr ocessing of this latest “State of the Art” design achieves: very low on-st ate resistance combined with high trans conductance; superior reverse energy an d diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSF ETs such as voltage control, very fast switching, ease of parelleling and temp erature stability of the electrical par ameters. They are well suited for appli cations such as switching power supplie s, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic.

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PD - 90549C
IRF9130
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6804
JANTXV2N6804
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]
100V, P-CHANNEL
Product Summary
Part Number BVDSS
IRF9130 -100V
RDS(on) ID
0.30 -11A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Units
-11
-7.0 A
-50
75 W
0.60
W/°C
±20 V
81 mJ
-11 A
7.5 mJ
-5.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

                    






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