Document
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA)
Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -11A
PD- 90549E
IRF9130 JANTX2N6804 JANTXV2N68064
100V, P-CHANNEL
REF: MIL-PRF-19500/562
Description
HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 (TO-204AA)
Features
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Lead Temperature
Weight
Value -11 -7.0 -44 75 0.60 ± 20 207 -11 7.5 -5.5
-55 to + 150
300 (0.063 in. (1.6mm) from case for 10s) 11.5 (Typical)
Units
A
W W/°C
V mJ A mJ V/ns
°C
g
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-07-29
IRF9130 JANTX2N6804/JANTXV2N6804
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol BVDSS BVDSS/TJ RDS(on)
VGS(th) IDSS
IGSS
QG QGS QGD td(on) tr td(off) tf
Ls +LD
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Total Inductance
Min. -100 –––
––– ––– -2.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
–––
Typ. Max. ––– ––– -0.087 –––
––– 0.30 ––– 0.36 ––– -4.0 ––– -25 ––– -250 ––– -100 ––– 100 ––– 29 ––– 7.1 ––– 21 ––– 60 ––– 140 ––– 140 ––– 140
6.1 –––
Units
Test Conditions
V VGS = 0V, ID = -1.0mA
V/°C Reference to 25°C, ID = -1.0mA
VGS = -10V, ID2 = -7.0A VGS = -10V, ID1 = -11A
V VDS = VGS, ID = -250µA
µA
VDS = -80V, VGS = 0V VDS = -80V,VGS = 0V,TJ =125°C
nA
VGS = -20V VGS = 20V
ID1 = -11A
nC VDS = -50V
VGS = -10V
VDD = -50V
ns
ID1 = -11A RG = 7.5
VGS = -10V
Measured from Drain lead (6mm /
nH
0.25 in from package) to Source lead (6mm/ 0.25 in from package)
Ciss
Input Capacitance
––– 860 –––
VGS = 0V
Coss
Output Capacitance
––– 350 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 125 –––
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS ISM
Continuous Source Current (Body Diode) ––– ––– -11
Pulsed Source Current (Body Diode)
––– ––– -44
A
VSD
Diode Forward Voltage
––– ––– -4.7 V TJ = 25°C,IS= -11A, VGS = 0V
trr
Reverse Recovery Time
––– ––– 250 ns TJ = 25°C,IF = -11A,VDD 50V
Qrr
Reverse Recovery Charge
––– ––– 3.0 µC di/dt = -100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (Typical socket mount)
Min. ––– –––
Typ. ––– –––
Max. 1.67 30
Units °C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25°C, L= 3.4mH, Peak IL = -11A, VGS = -10V. ISD -11A, di/dt -140A/µs, VDD -100V, TJ 150°C. Suggested RG =7.5 Ω Pulse width 300 µs; Duty Cycle 2%
2
International Rectifier HiRel Products, Inc.
2019-07-29
IRF9130 JANTX2N6804/JANTXV2N6804
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drai.