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JANTX2N6804 Dataheets PDF



Part Number JANTX2N6804
Manufacturers International Rectifier
Logo International Rectifier
Description P-Channel Power MOSFET
Datasheet JANTX2N6804 DatasheetJANTX2N6804 Datasheet (PDF)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF9130 -100V RDS(on)  ID -11A PD- 90549E IRF9130 JANTX2N6804 JANTXV2N68064 100V, P-CHANNEL REF: MIL-PRF-19500/562 Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conduc.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF9130 -100V RDS(on)  ID -11A PD- 90549E IRF9130 JANTX2N6804 JANTXV2N68064 100V, P-CHANNEL REF: MIL-PRF-19500/562 Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 (TO-204AA) Features  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  TJ Operating Junction and TSTG Storage Temperature Range Lead Temperature Weight Value -11 -7.0 -44 75 0.60 ± 20 207 -11 7.5 -5.5 -55 to + 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (Typical) Units A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol BVDSS BVDSS/TJ RDS(on) VGS(th) IDSS IGSS QG QGS QGD td(on) tr td(off) tf Ls +LD Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Min. -100 ––– ––– ––– -2.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. ––– ––– -0.087 ––– ––– 0.30 ––– 0.36 ––– -4.0 ––– -25 ––– -250 ––– -100 ––– 100 ––– 29 ––– 7.1 ––– 21 ––– 60 ––– 140 ––– 140 ––– 140 6.1 ––– Units Test Conditions V VGS = 0V, ID = -1.0mA V/°C Reference to 25°C, ID = -1.0mA  VGS = -10V, ID2 = -7.0A  VGS = -10V, ID1 = -11A  V VDS = VGS, ID = -250µA µA VDS = -80V, VGS = 0V VDS = -80V,VGS = 0V,TJ =125°C nA VGS = -20V VGS = 20V ID1 = -11A nC VDS = -50V VGS = -10V VDD = -50V ns ID1 = -11A RG = 7.5 VGS = -10V Measured from Drain lead (6mm / nH 0.25 in from package) to Source lead (6mm/ 0.25 in from package) Ciss Input Capacitance ––– 860 ––– VGS = 0V Coss Output Capacitance ––– 350 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions IS ISM Continuous Source Current (Body Diode) ––– ––– -11 Pulsed Source Current (Body Diode)  ––– ––– -44 A VSD Diode Forward Voltage ––– ––– -4.7 V TJ = 25°C,IS= -11A, VGS = 0V trr Reverse Recovery Time ––– ––– 250 ns TJ = 25°C,IF = -11A,VDD 50V Qrr Reverse Recovery Charge ––– ––– 3.0 µC di/dt = -100A/µs  ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Symbol Parameter RJC Junction-to-Case RJA Junction-to-Ambient (Typical socket mount) Min. ––– ––– Typ. ––– ––– Max. 1.67 30 Units °C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25°C, L= 3.4mH, Peak IL = -11A, VGS = -10V. ISD  -11A, di/dt  -140A/µs, VDD  -100V, TJ 150°C. Suggested RG =7.5 Ω  Pulse width  300 µs; Duty Cycle  2% 2 International Rectifier HiRel Products, Inc. 2019-07-29 IRF9130 JANTX2N6804/JANTXV2N6804 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drai.


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