JANTX2N6847 Id=-2.5A Datasheet

JANTX2N6847 Datasheet, PDF, Equivalent


Part Number

JANTX2N6847

Description

POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)

Manufacture

International Rectifier

Total Page 6 Pages
Datasheet
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JANTX2N6847
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Provisional Data Sheet No. PD-9.553B
JANTX2N6847
HEXFET® POWER MOSFET
JANTXV2N6847
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9220]
P-CHANNEL
-200 Volt, 1.5HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6847
JANTXV2N6847
-200V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.5
ID
-2.5A
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current Œ
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6847, JANTXV2N6847 Units
-2.5
-1.6 A
-10
20 W
0.16
W/K 
±20 V
-5.0 V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
oC
g
To Order

JANTX2N6847
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JANTX2N6847, JANTXV2N6847 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-200
-2.0
1.0
4.0
1.1
0.8
Typ. Max. Units
—— V
-0.22 — V/°C
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
— 1.5
— 1.725
— -4.0
——
— -25
— -250
— -100
— 100
— 15
— 3.2
— 8.4
— 50
— 70
— 40
— 50
5.0 —
15.0 —
330 —
100 —
33 —
V
S( )
µA
nA
nC
ns
VGS = -10V, ID = -1.6A
VGS = -10V, ID = -2.5A
VDS = VGS, ID = -250µA
VDS > -15V, IDS = -1.6A 
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -2.5A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -100V, ID = -2.5A,
RG = 7.5, VGS = -10V
see figure 10
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = -25V
pF f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — -2.5 A Modified MOSFET symbol showing the
— — -10
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
— — -4.8 V
Tj = 25°C, IS = -2.5A, VGS = 0V 
— — 300 ns Tj = 25°C, IF = -2.5A, di/dt -100A/µs
— — 3.0 µC
VDD -50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 6.25
— — 175 K/W
Test Conditions
Typical socket mount
To Order


Features Previous Datasheet Index Next Data She et Provisional Data Sheet No. PD-9.553B HEXFET ® JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [G ENERIC:IRFF9220] P-CHANNEL Product Summ ary Part Number JANTX2N6847 JANTXV2N684 7 BVDSS -200V RDS(on) 1.5Ω ID -2.5A -200 Volt, 1.5Ω HEXFET HEXFET technol ogy is the key to International Rectifi er’s advanced line of power MOSFET tr ansistors. The efficient geometry achie ves very low onstate resistance combine d with high transconductance. HEXFET tr ansistors also feature all of the well- establish advantages of MOSFETs, such a s voltage control, very fast switching, ease of paralleling and electrical par ameter temperature stability. They are well-suited for applications such as sw itching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and vi rtually any application where high reli ability is required. Features: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirem.
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