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Provisional Data Sheet No. PD-9.553B
HEXFET
®
JANTX2N6847 POWER MOSFET JAN...
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Index
Next Data Sheet
Provisional Data Sheet No. PD-9.553B
HEXFET
®
JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9220]
P-CHANNEL Product Summary
Part Number JANTX2N6847 JANTXV2N6847 BVDSS -200V RDS(on) 1.5Ω ID -2.5A
-200 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET
transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Features:
s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
JANTX2N6847, JANTXV2N6847 Units
-2.5 -1.6 -10 20 0.16 ±20 -5.0 -55 to 150 300 (0.063 i...