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JANTX2N6851 Dataheets PDF



Part Number JANTX2N6851
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=0.80ohm/ Id=-4.0A)
Datasheet JANTX2N6851 DatasheetJANTX2N6851 Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.551B JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230] ® P-CHANNEL -200 Volt, 0.80Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage.

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.551B JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9230] ® P-CHANNEL -200 Volt, 0.80Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required. Product Summary Part Number JANTX2N6851 JANTXV2N6851 BVDSS -200V RDS(on) 0.80Ω ID -4.0A Features: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6851, JANTXV2N6851 Units -4.0 -2.4 -16 25 0.20 ±20 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical) oC A W W/K  V V/ns g To Order Previous Datasheet Index Next Data Sheet JANTX2N6851, JANTXV2N6851 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. -200 — — — -2.0 2.2 — — — — 14.7 0.8 5.0 — — — — — Typ. Max. Units — -0.22 — — — — — — — — — — — — — — — 5.0 — — 0.80 1.68 -4.0 — -25 -250 -100 100 34.8 7.0 17 50 100 100 80 — V V/°C Ω V S( ) µA nA nC Ω Test Conditions VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA VGS = -10V, ID = -2.4A VGS = -10V, ID = -4.0A VDS = VGS, I D = -250 µA VDS > -15V, IDS = -2.4A  VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID = -4.0A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = -100V, ID = -4.0A, RG = 7.5Ω, VGS = -10V see figure 10 Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ns LS Internal Source Inductance — 15.0 — nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 700 200 40 — — — pF VGS = 0V, VDS = -25V f = 1.0 MHz see figure 5 Source-Drain Diode Ratings and Characteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Min. Typ. Max. Units — — — — -4.0 -16 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Tj = 25°C, IS = -4.0A, VGS = 0V  Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs VDD ≤ -50V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. — — — — — — -6.0 400 4.0 V ns µC Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units — — — — 5.0 175 K/W Test Conditions Typical socket mount To Order Previous Datasheet JANTX2N6851, JANTXV2N6851 Device Index Next Data Sheet Fig. 1 — Typical Output Characteristics TC = 25°C Fig. 2 — Typical Output Characteristics TC = 150°C Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs.Temperature Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet JANTX2N6851, JANTXV2N6851 Device Fig. 7 — Typical Source-to-Drain Diode Forward Voltage Fig. 8 — Maximum Safe Operating Area Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms To Order Previous Datasheet Index Next Data Sheet JANTX2N6851, JANTXV2N6851 Device Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — U.


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