JANTXV2N6760 Id=5.5A Datasheet

JANTXV2N6760 Datasheet, PDF, Equivalent


Part Number

JANTXV2N6760

Description

POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)

Manufacture

International Rectifier

Total Page 7 Pages
Datasheet
Download JANTXV2N6760 Datasheet


JANTXV2N6760
PD - 90335F
IRF330
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6760
JANTXV2N6760
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
400V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF330
400V
RDS(on)
1.00
ID
5.5A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.5
3.5 A
22
75 W
0.60
W/°C
±20 V
1.7 mJ
5.5 A
— mJ
4.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

JANTXV2N6760
IRF330
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
400 — — V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.46 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 1.00
— — 1.22
VGS = 10V, ID =3.5A
VGS =10V, ID =5.5A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
2.9 — — S ( )
VDS = VGS, ID =250µA
VDS > 15V, IDS =3.5A
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 µA
VDS=320V, VGS=0V
VDS =320V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
— — 100 nA
IGSS Gate-to-Source Leakage Reverse — — -100
VGS =20V
VGS =-20V
Qg Total Gate Charge
17 — 39
VGS =10V, ID=5.5A
Qgs Gate-to-Source Charge
2.0 — 6.0 nC
VDS =200V
Qgd
Gate-to-Drain (‘Miller’) Charge
8.0 — 20
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 30
— — 40
ns
— — 80
VDD =200V, ID =5.5A,
RG =7.5
tf Fall Time
— — 35
LS + LD
Total Inductance
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
— 620
— 200 —
— 75 —
pF
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 5.5
— — 22
A
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.4 V
— — 700 nS
— — 6.2 µc
Tj = 25°C, IS =5.5A, VGS = 0V
Tj = 25°C, IF = 5.5A, di/dt 100A/µs
VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.67
°C/W
— — 30
Test Conditions
Typical socket mount
www.irf.com


Features PD - 90335F IRF330 REPETITIVE A V ALANC HE AND dv/dt RATED JANTX2N6760  HEXF ET TRANSISTORS JANTXV2N6760 THRU-HOLE ( TO-204AA/AE) [REF:MIL-PRF-19500/542] 40 0V, N-CHANNEL Product Summary Part Numb er IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the k ey to International Rectifier’s advan ced line of power MOSFET transistors. T he efficient geometry and unique proces sing of this latest “State of the Art ” design achieves: very low on-state resistance combined with high transcond uctance; superior reverse energy and di ode recovery dv/dt capability. The HEXF ET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast swit ching, ease of paralleling and temperat ure stability of the electrical paramet ers. They are well suited for applicati ons such as switching power supplies, m otor controls, inverters, choppers, aud io amplifiers and high energy pulse cir cuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/.
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