JANTXV2N6764 Id=38A Datasheet

JANTXV2N6764 Datasheet, PDF, Equivalent


Part Number

JANTXV2N6764

Description

POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A)

Manufacture

International Rectifier

Total Page 7 Pages
Datasheet
Download JANTXV2N6764 Datasheet


JANTXV2N6764
PD - 90337G
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
IRF150
JANTX2N6764
THRU-HOLE (TO-204AA/AE)
JANTXV2N6764
[REF:MIL-PRF-19500/543]
Product Summary
100V, N-CHANNEL
Part Number BVDSS RDS(on) ID
IRF150
100V 0.05538A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
38
24 A
152
150 W
1.2 W/°C
±20 V
150 mJ
38 A
15 mJ
5.5
-55 to 150
V/ns
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
08/21/01

JANTXV2N6764
IRF150
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
9.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
50
8.0
25
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.13 — V/°C
— 0.055
— 0.065
— 4.0 V
— — S( )
— 25
— 250 µA
— 100 nA
— -100
— 125
— 22 nC
— 65
— 35
— 190 ns
— 170
— 130
6.1 — nH
3700
1100
200
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID =24A
VGS =10V, ID =38A
VDS = VGS, ID =250µA
VDS > 15V, IDS =24A
VDS=80V, VGS=0V
VDS =80V
VGS = 0V, TJ = 125°C
VGS =20V
VGS =-20V
VGS =10V, ID= 38A
VDS =50V
VDD =50V, ID =38A,
VGS =10V,RG =2.35
Measured from the center of
drain pad to center of source
pad
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — — 38
ISM Pulse Source Current (Body Diode)
— — 152
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.9 V
— — 500 nS
— — 2.9 µc
Tj = 25°C, IS =38A, VGS = 0V
Tj = 25°C, IF = 38A, di/dt 100A/µs
VDD 30V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 0.83
°C/W
— — 30
Test Conditions
Typical socket mount
www.irf.com


Features PD - 90337G REPETITIVE AVALANCHE AND dv /dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Num ber IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A  IRF150 JANTX2N6764 JANTXV2 N6764 [REF:MIL-PRF-19500/543] 100V, N-C HANNEL The HEXFETtechnology is the key to International Rectifier’s adva nced line of power MOSFET transistors. The efficient geometry and unique proce ssing of this latest “State of the Ar t” design achieves: very low on-state resistance combined with high transcon ductance; superior reverse energy and d iode recovery dv/dt capability. The HEX FET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast swi tching, ease of paralleling and tempera ture stability of the electrical parame ters. They are well suited for applicat ions such as switching power supplies, motor controls, inverters, choppers, au dio amplifiers and high energy pulse ci rcuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv.
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