JANTXV2N6770 Datasheet: TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A)





JANTXV2N6770 TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A) Datasheet

Part Number JANTXV2N6770
Description TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A)
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTXV2N6770 Datasheet PDF

Features: PD - 90330F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HO LE (TO-204AA/AE) Product Summary Part N umber IRF450 BVDSS 500V RDS(on) 0.400 ID 12A  IRF450 JANTX2N6770 JANTX V2N6770 500V, N-CHANNEL The HEXFETt echnology is the key to International R ectifier’s advanced line of power MOS FET transistors. The efficient geometry and unique processing of this latest State of the Art” design achieves: very low on-state resistance combined w ith high transconductance; superior rev erse energy and diode recovery dv/dt ca pability. The HEXFET transistors also f eature all of the well established adva ntages of MOSFETs such as voltage contr ol, very fast switching, ease of parall eling and temperature stability of the electrical parameters. They are well su ited for applications such as switching power supplies, motor controls, invert ers, choppers, audio amplifiers and hig h energy pulse circuits. TO-3 Feature s: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermeticall.

Keywords: JANTXV2N6770, datasheet, pdf, International Rectifier, TRANSISTORS, N-CHANNELVdss=500V/, Rdson=0.400ohm/, Id=12A, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

PD - 90330F
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS
IRF450
500V
RDS(on)
0.400
ID
12A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
IRF450
JANTX2N6770
JANTXV2N6770
500V, N-CHANNEL
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS =0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12
7.75
A
48
150 W
1.2 W/°C
±20 V
8.0 mJ
12 A
- mJ
3.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

                    






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)