JANTXV2N6794 Datasheet PDF


Part Number

JANTXV2N6794

Description

POWER MOSFET N-CHANNEL

Manufacture

International Rectifier

Total Page 7 Pages
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Features Datasheet pdf PD - 90429D IRFF420 JANTX2N6794 REPET ITIVE AVALANCHE AND dv/dt RATED JANTXV 2N6794 HEXFET®TRANSISTORS REF:MIL-PR F-19500/555 THRU-HOLE (TO-205AF) 500V , N-CHANNEL Product Summary Part Numb er BVDSS IRFF420 500V RDS(on) 3.0Ω ID 1.5A The HEXFET®technology is th e key to International Rectifier’s ad vanced line of power MOSFET transistors . The efficient geometry and unique pro cessing of this latest “State of the Art” design achieves: very low onstat e resistance combined with high transco nductance. The HEXFET transistors also feature all of the well established adv antages of MOSFETs such as voltage cont rol, very fast switching, ease of parel leling and temperature stability of the electr.
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JANTXV2N6794 Datasheet
PD - 90429D
IRFF420
JANTX2N6794
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6794
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFF420
500V
RDS(on)
3.0
ID
1.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.5
1.0
6.0
20
0.16
±20
0.242
2.2
2.0
3.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
08/06/07




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