JANTXV2N6796 Datasheet PDF


Part Number

JANTXV2N6796

Description

POWER MOSFET N-CHANNEL

Manufacture

International Rectifier

Total Page 7 Pages
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Download JANTXV2N6796 Datasheet PDF


Features Datasheet pdf PD - 90430C REPETITIVE AVALANCHE AND dv /dt RATED HEXFETTRANSISTORS THRU-HOL E (TO-205AF) Product Summary Part Num ber BVDSS IRFF130 100V RDS(on) 0.18 ID 8.0A IRFF130 JANTX2N6796 JANTXV 2N6796 REF:MIL-PRF-19500/557 100V, N-CH ANNEL The HEXFETtechnology is the k ey to International Rectifier’s advan ced line of power MOSFET transistors. T he efficient geometry and unique proces sing of this latest “State of the Art ” design achieves: very low on-state resistance combined with high transcond uctance. The HEXFET transistors also fe ature all of the well established advan tages of MOSFETs such as voltage contro l, very fast switching, ease of parelle ling and temperature stability of the electrical.
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JANTXV2N6796 Datasheet
PD - 90430C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF130
100V
RDS(on)
0.18
ID
8.0A
IRFF130
JANTX2N6796
JANTXV2N6796
REF:MIL-PRF-19500/557
100V, N-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
8.0
5.0 A
32
25 W
0.20
W/°C
±20 V
75 mJ
—A
— mJ
5.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01




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