JANTXV2N6806 Datasheet PDF


Part Number

JANTXV2N6806

Description

P-CHANNNEL TRANSISTORS

Manufacture

International Rectifier

Total Page 7 Pages
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Download JANTXV2N6806 Datasheet PDF


Features Datasheet pdf PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS J ANTX2N6806 JANTXV2N6806 THRU-HOLE -TO- 204AE (TO-3) REF:MIL-PRF-19500/562 20 0V, P-CHANNNEL Product Summary Part Nu mber BVDSS IRF9230 -200V RDS(on) 0.80 Ω ID -6.5A The HEXFET®technology i s the key to International Rectifier’ s advanced line of power MOSFET transis tors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high tra nsconductance; superior reverse energy and diode recovery dv/dt capability. Th e HEXFET transistors also feature all o f the well established advantages of MO SFETs such as voltage control, very fast switc.
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JANTXV2N6806 Datasheet
PD-90548D
IRF9230
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
JANTX2N6806
JANTXV2N6806
THRU-HOLE -TO-204AE (TO-3)
REF:MIL-PRF-19500/562
200V, P-CHANNNEL
Product Summary
Part Number BVDSS
IRF9230 -200V
RDS(on)
0.80
ID
-6.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance;
superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n RepetitiveAvalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-6.5
-4.0 A
-26
75 W
0.60
W/°C
±20 V
181 mJ
-6.5 A
7.5 mJ
-5.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
09/28/15




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