Document
Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.552B
HEXFET
®
JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9120]
P-CHANNEL Product Summary
Part Number JANTX2N6845 JANTXV2N6845 BVDSS -100V RDS(on) 0.60Ω ID -4.0A
-100 Volt, 0.60Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
Features:
s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
JANTX2N6845, JANTXV2N6845 Units
-4.0 -2.6 -16 20 0.16 ±20 -5.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical)
A
W W/K V V/ns
o
C
g
To Order
Previous Datasheet
Index
Next Data Sheet
JANTX2N6845, JANTXV2N6845 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
-100 — — — -2.0 1.25 — — — — 4.3 1.3 1.0 — — — — —
Typ. Max. Units
— -0.10 — — — — — — — — — — — — — — — 5.0 — — 0.60 0.69 -4.0 — -25 -250 -100 100 16.3 4.7 9.0 60 100 50 70 — V V/°C Ω V S( ) µA nA nC Ω
Test Conditions
VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA VGS = -10V, ID = -2.6A VGS = -10V, ID = -4.0A VDS = V GS, ID = -250µA VDS > -15V, IDS = -2.6A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -10V, ID = -4.0A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = -50V, ID = -4.0A, RG = 7.5Ω, VGS = -10V see figure 10
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-O.